Thermal Annealing Effects on the Optical Properties of High-indium InGaN Epi-layers
Journal
physica status solidi (c)
Journal Volume
0
Journal Issue
7
Pages
2654-2657
Date Issued
2003
Author(s)
Abstract
We compared the optical and material properties of two high-indium InGaN thin layers between the as-grown and post-growth thermally annealed conditions. In one of the samples, the major part of photoluminescence spectrum was shifted from the original yellow band into the blue range upon thermal annealing. Cathodo-luminescence (CL) spectra showed that the spectral shift occurred essentially in the photons emitted from a shallow layer of the InGaN film. The deeper layer in the as-grown film contributed blue emission because it had been thermally annealed during the growth of the shallow layer. The spectral shift was mainly attributed to the shrinkage of cluster size through spinodal decomposition upon thermal annealing. The attribution was supported by the observations in the CL, X-ray diffraction (XRD), time-resolved photoluminescence (TRPL) and, high-resolution transmission electron microscopy (HRTEM) results. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.
Other Subjects
As-grown films; Material property; Photoluminescence spectrum; Shallow layers; Spectral shift; Thermal annealing effects; Thermal-annealing; Time-resolved photoluminescence; Film growth; Indium; Light; Nitrides; Optical properties; Photoluminescence; Spinodal decomposition; Transmission electron microscopy; X ray diffraction; Annealing
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Type
journal article