High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy

Journal

IEEE Electron Device Letters

Journal Volume

13

Journal Issue

4

Pages

214-216

Date Issued

1992

Author(s)

Lu, S.S.

Huang, C.C.

DOI

10.1109/55.145025

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0026854515&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/298345

SDGs

[SDGs]SDG7

Type

journal article