High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy
Journal
IEEE Electron Device Letters
Journal Volume
13
Journal Issue
4
Pages
214-216
Date Issued
1992
Author(s)
Abstract
A Ga0.51In0.49P/GaAs heterojunction bipolar transistor (HBT) grown on a (100) substrate by gas-source molecular beam epitaxy (GSMBE) was fabricated. A common-emitter dc current gain exceeding 1580 (differential gain >2100) and an offset voltage as small as 120 mV were achieved. The results demonstrate that high current gain and small offset voltage could be maintained without the need of grading the emitter /base junction in the Ga0.51In0.49P/GaAs system because of its larger valence-band discontinuity than conduction-band discontinuity. To our knowledge, the electrical current gain achieved was the highest value ever reported in Ga0.51ln0.49P/GaAs system HBT's. © 1992 IEEE
SDGs
Type
journal article