彈性應變對自組式量子點光電特性之影響(2/3)
Date Issued
2005-07-31
Date
2005-07-31
Author(s)
DOI
932212E002015
Abstract
In this year’s project, the models based
on linear elasticity and initial stress theory
are successfully developed to evaluate the
strain fields in the InAs/GaAs quantum dot
nanostructures. The lattice mismatch in heterostructures
induce the initial stress in
quantum dots, and it will further lead to
elastic deformation which calculated by finite
element package—FEMLAB.
The Schrödinger equation, including the
strain-induced potential is also solved by
finite element method. The solutions consist
of the eigenenergy and the probability density
function of the conduction band.
The material properties of InGaAs
quantum dots are assumed to depend on
indium concentrations (c(x,z) ). The strain
distributions obtained by using the FEM
have good agreement with experimentally
data through HREM imaging.
Our results show that the energies of
interband transitions and emission light’s
wavelength are 1.1 ~ 0.84 eV and 1.13 ~
1.48μm, respectively.
Subjects
Self-assembled quantum dot
Strain field
FEM
Schrödinger equation
Publisher
臺北市：國立臺灣大學應用力學研究所
Type
report
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