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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
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High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
Journal
IEEE Electron Device Letters
Journal Volume
17
Journal Issue
9
Pages
452-454
Date Issued
1996
Author(s)
Lin, Y.-S.
Lu, S.-S.
DOI
10.1109/55.536290
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030241695&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/324117
Type
journal article
