High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE

Journal

IEEE Electron Device Letters

Journal Volume

17

Journal Issue

9

Pages

452-454

Date Issued

1996

Author(s)

Lin, Y.-S.

DOI

10.1109/55.536290

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0030241695&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/324117

Type

journal article