High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
Journal
IEEE Electron Device Letters
Journal Volume
17
Journal Issue
9
Pages
452-454
Date Issued
1996
Author(s)
Lin, Y.-S.
Abstract
The first Ga/sub 0.51/In/sub 0.49/P channel MESFETs grown on a (100) GaAs substrate by GSMBE have been fabricated. A high gate-to-drain breakdown voltage of 42 V with a high maximum current density (320 mA/mm) was achieved. This result demonstrates that high-breakdown voltage could be attained by using Ga/sub 0.51/In/sub 0.49/P as the channel material. We also measured a high-maximum oscillation frequency (f max ) of 30 GHz for a 1.5 μm gate-length device. This value is quite high compared with other high-breakdown-voltage GaAs MESFET's or MISFET's with the same gate length.
SDGs
Type
journal article