絕緣層上應變矽/矽鍺晶圓製成
Date Issued
2004
Date
2004
Author(s)
陳博文
DOI
zh-TW
Abstract
In this thesis, the directly hydrophilic wafer bonding method is achieved by rapid thermal process. A Si wafer is successfully bonded to another Si wafer capped with 700 nm BPSG by the rapid thermal process. The rapid thermal process strength the chemical bonds between the two wafers. In this process, we can shorten the anneal time down to 30 minutes.
Then we propose a method for forming strained Si on relaxed SiGe on insulator by smart-cut process and direct wafer bonding. It is described incorporating growing epitaxial SiGe layer on a semiconductor substrate, implanting hydrogen ions into the host wafer substrate to form an in-depth weaken layer, bonding two substrates together via thermal treatments and layer transfer taking place along the in-depth weaken layer by H2 blistering at high temperature treatment. The strained Si layer on separated substrate may thin down by chemical etching or CMP process, and have strain-enhanced via high temperature annealing.
Finally, the 2-D buckled SiGe quantum wells of elastic film on semiconductors are obtained by wafer bonding and layer transfer techniques. It is described incorporating epitaxially growing pseudomorphic SiGe layer on a viscous substrate, then with high temperature treatment. Lateral thermal expansion and counterforce by viscous substrates produce compressive during thermal annealing treatment. One approach to relieving compressive stresses in thin semiconductor films is to bend them out of the nominal plane by viscous flow at temperatures above the glass transition temperature. 2-D buckled SiGe quantum wells via high temperature oxidation.
Subjects
應變矽
應變矽鍺
絕緣層
buckling
SGOI
strained SiGe
wafer bonding
strained Si
H implant
Type
thesis
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