Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current
Journal
Journal of the Electrochemical Society
Journal Volume
151
Journal Issue
12
Date Issued
2004
Author(s)
Abstract
Suboxide between and Si examined by current-voltage (I-V) measurement was found to exhibit the thickness-dependent inversion current property. In this work, oxides with thickness ranging from 20 to 40 Å were grown on a single wafer. It was found that in gate injection bias, currents decrease with oxide thickness However, in the substrate injection region, currents saturate and the saturated levels increase with From the X-ray photoelectron spectroscopy results, suboxide width was observed to increase with We believe the minority carriers generated from the suboxide region contributes to the additional current source that lead to the polarity-dependent I-V characteristics in MOS diode. © 2004 The Electrochemical Society. All rights reserved.
Type
journal article