Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress
Journal
Journal of Applied Physics
Journal Volume
107
Journal Issue
3
Date Issued
2010
Author(s)
Abstract
Transmission line pulse measurements were used to investigate the reliability of the HfO2 dielectric under an electrostatic discharge event. Time-dependent dielectric breakdown of the gate oxide was characterized down to the microsecond time regime. The positive oxide-trapped charges Qot+ were observed beyond a certain electric field and the corresponding centroid evolution was examined. In the high-field stress regime, the field acceleration parameter of the HfO2 dielectric is smaller than that of the silicon oxynitride. We also demonstrated this phenomenon can be attributed to the stronger phonon-assisted tunneling process in the high-k dielectrics.
SDGs
Type
journal article