Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal

Device Research Conference

Pages

39-40

Date Issued

2008

Author(s)

Lin, T.D.

Chen, C.P.

Chiu, H.C.

Chang, P.

Lin, C.A.

Kwo, J.

Tsai, W.

DOI

10.1109/DRC.2008.4800726

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443412

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-58249102651&doi=10.1109%2fDRC.2008.4800726&partnerID=40&md5=d9d42a80b30d7046a49651f056936d6b

Type

conference paper