Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa
Journal
Journal of Physics and Chemistry of Solids
Journal Volume
62
Journal Issue
6
Pages
1103-1109
Date Issued
2001
Author(s)
Abstract
The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied by resonant photoemission spectroscopy (RESPES) and X-ray absorption near-edge spectra (XANES) at the Ni L2,3-edges. The RESPES spectra are explained with atomic multiplet model, and the XANES data are compared with those calculated with multiple-scattering theory. The number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and Ni3In. © 2001 Elsevier Science Ltd.
Type
journal article