Magnetic properties of Fe62Co19Ga19 films deposited on Si(100) substrates
Resource
Journal of Applied Physics, 109(7), 07A920
Journal
Journal of Applied Physics
Pages
07A920
Date Issued
2011
Date
2011
Author(s)
Jen, S.U.
Tsai, T.L.
Li, M.S.
Kuo, P.C.
Lin, M.Y.
Abstract
Fe81–XCoXGa19 films, with x = 0−23 atom % Co, were deposited on Si(100) substrates, respectively, by the dc magnetron sputtering method. Film thickness (tf) ranged from 30 to 400 nm. We have done the following experiments on those films: saturation magnetostriction (λS), high-temperature magnetic hysteresis, x-ray diffraction (XRD), atomic force microscopy, Auger-depth profile analysis, and plane-view and/or cross-section transmission electron microscopy. Our main finding is that if x increases from 0 to 19 atom % Co, λS increases from 56 to 152 ppm, and if x continues to increase from 19 to 23 atom % Co, λS decreases. These results indicate that the addition of Co in the Fe81Ga19 alloy is advantageous in enhancing λS, if x is the correct value. From XRD, the Fe62Co19Ga19/Si(100) film comprises the A2 and B2 phases. The mechanism for large enhancement of λS in Fe62Co19Ga19/Si(100) is related to an intrinsic origin. The tf dependence of λS for the Fe62Co19Ga19 films is that: [1] in the range of 110 ≤ tf ≤ 400 nm, λS increases as tf decreases; [2] in the range of 30 ≤ tf ≤ 110 nm, λS decreases as tf continues to decrease. The λS behavior in the regions [1] and [2] is explained based on the modified Neel model. Other physical properties of the Fe62Co19Ga19 films include the following: saturation magnetization 4πMS = 1.8 – 2.0 T, coercivity HC = 35 – 64 Oe, Curie temperature TC = 597 °C, planar (mean) grain size DP = 29.6 nm, and columnar grain size DL ≈ tf.
Type
journal article
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