Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality
Journal
Nanomaterials
Journal Volume
14
Journal Issue
11
Start Page
972
ISSN
2079-4991
Date Issued
2024-06-03
Author(s)
Bhartendu Papnai
Ding-Rui Chen
Rapti Ghosh
Zhi-Long Yen
Yu-Xiang Chen
Khalil Ur Rehman
Hsin-Yi Tiffany Chen
Ya-Ping Hsieh
Abstract
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
Subjects
2D materials
Langmuir–Blodgett
molecular layer
negative differential resistance
quantum capacitance
Publisher
MDPI AG
Type
journal article