Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
Journal
IEEE Electron Device Letters
Journal Volume
21
Journal Issue
12
Pages
601-603
Date Issued
2000
Date
2000
Abstract
An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.
SDGs
Other Subjects
Carrier mobility; Diodes; Electrodes; Electron tunneling; Light emitting diodes; MOS devices; Photolithography; Quantum efficiency; Silicon; Surface roughness; Metal oxide silicon diodes; Electroluminescence
Type
journal article
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