Study of current leakage in InAs p-i-n photodetectors
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
18
Journal Issue
6
Pages
2624-2626
Date Issued
2000
Author(s)
CHIEH-HSIUNG KUAN
Lin, R.-M.
Tang, S.-F.
CHIEH-HSIUNG KUAN
Abstract
The current leakages of InAs photodiodes have been systematically studied by adding undoped layers having thicknesses of 0, 0.30, and 0.72 μm between the p–n junction. At reverse bias V=−0.5 V, the dark currents of the InAs p–i–n diodes with undoped layer thicknesses of 0, 0.30, and 0.72 μm are about 5×10−6, 7×10−8, and 1×10−10 A, respectively, at 77 K. The leakage current of the InAs p–n diode was successfully reduced by adding 0.72-μm-thick undoped layer between the p–n junction.
Type
journal article