Germanium Metal-Oxide-Semiconductor Light-Emitting Device
Date Issued
2007
Date
2007
Author(s)
Lee, Cheng-Ting
DOI
en-US
Abstract
In this thesis, we present the infrared emission from Ge metal-oxide-semiconductor (MOS) tunneling diodes. The peak emission wavelength of ~1.8μm is observed. The electron-hole-plasma model is then used to get the fitting line of the emission spectra and the theoretical band gap energy values. It is observed that the emission light intensity of Ge is stronger than Si, where possible reasons may be the higher radiative recombination rate and the slightly smaller wave vector needed to conserve momentum in Ge. To understand the influences of different metal gate materials on the performance of Ge MOS light-emitting device (LED), the characteristics of Al and Pt gate devices are investigated. Al gate devices have stronger emission than Pt gate devices under the same injection current operation.
The emission properties of strained-Ge MOS LED are also investigated. Using the external strain mechanism, we apply biaxial and uniaxial strain on the Ge MOS LED. The emission wavelength of strained-Ge MOS LED is redshifted due to the band gap reduction, and biaxial strain can give more band gap reduction than uniaxial strain.
Finally, we transfer optical signals between Ge MOS tunneling diodes in free space. The Ge MOS tunneling structure can emit and detect photons through different operation principles. The transmission rate can reach 15MHz or higher.
Subjects
發光二極體
金氧半
鍺
應變
LED
light-emtting device
MOS
germanium
Ge
strain
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-96-R94943120-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):2171f7b10d14ef69ae660d5e4128dd75