Functional applications based on resistive switching memory
Date Issued
2015
Date
2015
Author(s)
Kang, Chen-fang
Abstract
Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Bi, Mn)Ox (BMO) is investigated and several key performance characteristics of Pt/BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20 fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. The pursuit of improving the figure of merit of thermoelectric efficiency (ZT) in thermoelectric materials has been an ongoing endeavor for the past decades. We for the first time show a straightforward, and generic approach for a drastic enhancement of ZT (from 0.35 to 1.08 in (Bi, Mn)Ox (BMO) thin films, for example) via the resistive switching process applied for a variety of materials without any additional materials and manufacturing processes. Using formation and disruption of conductive nanofilaments with ~10 nm in diameter, a switchable and stable ZT (switched from 0.18 to 1.08 in BMO with origin ZT of 0.35, for example)) can be electrically controlled, which is confirmed by the transmission electron microscopy. This study paves a new way for enhancing/controlling ZT factor in the future thermoelectric development at mass production scale. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation and thermoelectric device based on RRAM.
Subjects
Nanofilament
Operating energy
Ultralow power
Memory
Thermoelectric ZT enhancement
Complex metal oxide
Type
thesis
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