High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control
Resource
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Journal
IEEE Radio Frequency Integrated Circuits Symposium
Pages
609-612
Date Issued
2005
Author(s)
Hua, Wei-Chun
Lai, Hung-Hui
Lin, Po-Tsung
Liu, Chee Wee
Yang, Tzu-Yi
Ma, Gin-Kou
Abstract
A high-linearity and temperature-insensitive 2.4 GHz power amplifier (PA) with dynamic-bias control is realized in a SiGe HBT technology with 0.9 /spl mu/m emitter width. Due to the bias linearization, the P/sub 1dB/ of 27 dBm is only 0.5 dB lower than P/sub sat/, which is the record low to the best of our knowledge. With simple temperature-insensitive bias, the total current deviations from the room temperature values are smaller than 6% and 10% at the linear P/sub out/ (24/20 dBm) for 802.11b and 802.11g, respectively, at the test temperatures from 0/spl deg/C to 85/spl deg/C. The integrated power detector has a wide dynamic range of 20 dB. The DC current can be reduced to 53 mA and the power-added-efficiency (PAE) can be enhanced up to 3 times at low P/sub out/ level under dynamic-bias control operation, and meanwhile the 802.11b/g linearity requirements are achieved. This design is most suitable for the future 802.11n application due to its high linearity.
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Type
conference paper
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