Current Transport in Charge Injection Devices
Resource
Proceeding of SPIE International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Application, v.1362, p.768-777
Journal
SPIE International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Application
Journal Volume
v.1362
Pages
768-777
Date Issued
1994
Date
1994
Author(s)
Abstract
Based on Shockley diffusion theroy we proposed an injection current model for the metaloxide- semiconductor (MOS) charge injectioii device (CID) under charge sharing mode readout scheme. It is found that the injection current is proportional to the inverion charge concentration afl(l the exl)onential of surface potential divided by thermal voltage i. e. the relation follows the famous ideal (liode equatioii. In Or(ler to verify the model we develop a photocurrent method to measure the injection curreiit versus surface potential characteristics of a silicon MOS capacitor. Jl experimental results are in good agreement with the ideal diode equation afl(1 the ideality factor is very close to unity. Based on this model we also derive the equivalent SPICE circuit for the single-gate CID.
SDGs
Type
conference paper