High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

Resource

IEEE Electron Device Letters 29 (2): 158-160

Journal

IEEE Electron Device Letters

Journal Volume

29

Journal Issue

2

Pages

158-160

Date Issued

2008

Date

2008

Author(s)

Shi, J.-W.

Sheu, J.-K.

Chen, C.-H.

Lin, G.-R.

Lai, W.-C.

URI

Type

journal article

File(s)

Name

24.pdf

Size

187.44 KB

Format

Adobe PDF

Checksum

(MD5):3b126b25da4ead2da4ec8a437b0ce7d4