Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance
Journal
IEEE Transactions on Electron Devices
Journal Volume
66
Journal Issue
6
Pages
2710-2714
Date Issued
2019
Author(s)
Abstract
High device density and high power density intensify the self-heating effect in scaled FinFET circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary scattering in nanostructure, alloy scattering in SiGe, and interfacial thermal resistance (ITR) between different materials even worsen the self-heating. A modularized FinFET SPICE model consisting of distributed Rth-Cth network is used to provide a transient thermal response. A two-step pseudo isothermal plane model is proposed to characterize the thermal behavior of BEOL. Both BEOL and FinFET SPICE model are verified by TCAD simulation with dc and ac inputs. The ITR significantly raises the junction temperature of the FinFETs (ΔTj∼ 42°C).
SDGs
Type
journal article