Study the influence of nanoscale indium fluctuation to the optical and electrical properties of InGaN/GaN multiple quantum well LED
Date Issued
2014
Date
2014
Author(s)
Yang, Tsung-Jui
Abstract
InGaN quantum well LED has become a popular technology in solid lighting state. Due to the strong lattice mismatch between InN and GaN layers, the self-formed random indium
uctuation has played an important role in influencing the LED s electrical and optical properties. In this paper, we report on the influence of nanoscale indium fluctuation to the emission spectrum and carrier transport in LED. In our simulation, we use our random generator to generate the indium fluctuation, which can show some similarities to the experiment data from Atom Probe Tomography (APT). The results show that when including the indium fluctuation, the emission spectrum will broaden because of the wider range of emission energy. On the other hand, our indium fluctuation model is much better in predicting the device. The main reason is that the indium fluctuation strongly affects the carrier transport in the device. Therefore, the I-V curve and IQE curve are much more matching to the experiment data. Based on our simulation result, we explain the cause of the droop effect, which is still debatable nowadays. Finally, we consider that if the level of indium fluctuation can be controlled, it is possible to optimize the device in the future.
Subjects
發光二極體
量子井
氮化銦鎵
氮化鎵
銦元素波動
Type
thesis
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