Investigation of Ga-doped ZnO Ohmic Contact to p-GaN
Date Issued
2006
Date
2006
Author(s)
Juang, Jia-Lin
DOI
zh-TW
Abstract
We report on the Ga-doped ZnO ohmic contact to p-GaN. The GZO transparent ohmic contact layer was deposited on p-GaN by RF- sputter. The transmittance of a GZO film with a thickness of 350 nm was 75%-82% for the light in the wavelength range of 400 and 500 nm.In addition,the GZO contact film yielded a low specific contact resistance of 1.2×10-2 (ohm cm2) on p-GaN when annealed at
700oC for 5 min under a nitrogen ambient. Secondary ion mass spectroscopy and x-ray photoemission spectroscopy analyses of the GZO and p-GaN interface indicated that Ga atoms had out-diffused after the thermal annealing process, resulting in a decrease in contact resistance.
Subjects
氧化鋅摻雜鎵
歐姆接觸
特徵接觸阻抗
GZO
ohmic contact
specific contact resistance
Type
thesis
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