Instability threshold resonances in directly modulated external-cavity semiconductor lasers
Journal
Applied Physics Letters
Journal Volume
52
Journal Issue
4
Pages
263-265
Date Issued
1988
Author(s)
Abstract
The relationship between the modulation frequency and maximum modulation depth for stable and low-noise oscillation in external-cavity semiconductor lasers is investigated. Sharp resonances in the threshold for the onset of instability occur when the laser is nearly synchronously modulated. A physical model is proposed to explain these observations.
Type
journal article