Study of the Hydrogen Effect on Si-SiO2 Interface Property for MOS Capacitor after Water Immersion
Date Issued
2006
Date
2006
Author(s)
Chen, Pi-Hung
DOI
en-US
Abstract
In this work, we study the characteristic of SiO2-Si interface of MOS capacitor under the influence of hydrogen ion after water immersion. Due to that MOS capacitor has small size, mature technology and can be massively produced，it enables MOS capacitor to be used in variety of applications, and it’s characteristic is also being studied widely. By definition, MOS capacitor can be used for censors, but only under the limitation of temperature sensor, gas sensor and image sensor. However, for the use on humidity sensor, the technology is yet clarified. In addition, the ionization of water would usually produce hydrogen ions under the room temperature and it would be caused the water to contain massive quantity of hydrogen ions. Therefore, the J-V behavior of the SiO2-Si interface of MOS capacitors after water immersion will be changed by hydrogen effect.
In our work, we will discuss the effectiveness of hydrogen ions toward the SiO2-Si interface of MOS capacitors with different immersion time. First we prepare two groups of MOS capacitors which have different thickness of oxide layer； One group has thin oxide layer (1 nm) and the other group has thick oxide layer (2.4 nm). Then we investigate the effect of immersion time is related to the MOS capacitors with different thicknesses. In addition, we immerse the MOS capacitors in the water for different time and apply additional bias voltage, and investigate immersion time effect and bias effect on the MOS capacitors. From the experimental results, we can clearly see that the immersion time and bias effects on the SiO2-Si interface of the MOS capacitors with thin and thick oxide after water immersion are different and obvious. The electrical characteristic of the MOS capacitors will also change with the thickening of the gate oxide.
Subjects
界面
氫離子遷移
氧化層
界面缺陷
Interface
Hydrogen Mobility
oxide
Dit
Type
thesis