Rabi splitting at intersubband transition assisted by longitudinal optical phonon
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
75
Journal Issue
24
Pages
245315-1 - 245315-5
Date Issued
2007
Author(s)
Dvoynenko, M.M.
Abstract
Rabi splitting in absorption spectra of intersubband transition of a polar semiconductor quantum well is predicted if the intersubband frequency is near the longitudinal phonon frequency. The calculated value of the splitting for a GaAs quantum well changes from 1.82 meV to 6.86 meV, when the electron concentration varies from 1016 to 1017 cm-3. It is also predicted that the absorptance is enhanced as compared to the one for a nonpolar quantum well with the same intersubband transition. The oscillator model of the dielectric function gives the same order of the splitting. © 2007 The American Physical Society.
Publisher
American Physical Society
Type
journal article