Amorphous and Microcrystalline Silicon Thin Film Solar Cell Simulation
Date Issued
2009
Date
2009
Author(s)
Lin, Wei-Yen
Abstract
In this thesis, the amorphous Si based thin-film solar cell is introduced. First, the model for single junction simulation is established. The disorder in the amorphous Si, which causes the tail states and deep states distribution, is also considered in the simulation. The single junctions of amorphous Si and microcrystalline Si are compared with the experiment data. Furthermore, the optimal thicknesses of i-layer of amorphous Si and microcrystalline Si are discussed. The simulation of double junction with two p-i-n single junctions in series is also discussed. For the current matching, the optimal thicknesses of top and bottom cells are discussed. With the addition of Germanium layer, the efficiency of triple junction solar cell could reach about 12%. Finally, the pi-i-n structure provides a new concept for fabricating solar cells.
Subjects
solar cell
thin film
amorphous silicon
microcrystalline silicon
Type
thesis
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