Electron Transport in Silicon Quantum Dot Single-Electron-Transistors
Date Issued
2010
Date
2010
Author(s)
Lin, Ming-Chou
Abstract
Abstract
First, we have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.
Next, we report fabrication, measurement and simulation of silicon single-electron- transistors made on silicon-on-insulator wafers. At T~2K, these devices showed clear Coulomb blockade structures. External perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to ascertain the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.
Subjects
silicon,single electron transistor,quantum dot,resonant tunneling,electron beam lithography
Type
thesis
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