An Improved Analytical Model for Short-Channel MOSFET's

Resource

IEEE Transactions on Electron Devices, v.11, p.2626-2629

Journal

IEEE Transactions on Electron Devices

Journal Volume

v.11

Pages

2626-2629

Date Issued

1992-09

Date

1992-09

Author(s)

Feng, Wu-Shiung

URI

Type

journal article