Fabrication and characterization of ITO/CuS thin films-based thermoelectric generators
Journal
Vacuum
Journal Volume
224
Start Page
113172
ISSN
0042-207X
Date Issued
2024-06
Author(s)
L. Amiri
A. Tchenka
M. Bousseta
S. Elmassi
A. Alsaad
L. Nkhaili
A. Elbacha
A. El kissani
A. Narjis
A. Outzourhit
Abstract
In this study, thin films-based thermoelectric generators (TEG) were fabricated using the flash evaporated copper sulfide films and radio frequency (RF) sputtered ITO films, deposited on 26 × 76 mm2 glass substrates. After careful study of the Seebeck coefficient of both films, without and with annealing at 350 °C, the open-circuit voltage for the eight junctions was studied as a function of the temperature gradient. Applying a temperature gradient of 40 K, the obtained maximum voltage is shown to be 10.9 mV, which increases to 15.6 mV by annealing. The internal resistance of the TEG remains unchanged, possibly due to the inverse evolution of resistivity during the annealing process of the CuS and ITO films. The obtained outputpower is 13 nW for the as-deposited films and increases to 26.2 nW by annealing.
Publisher
Elsevier BV
Type
journal article