High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C

Journal

Thin Solid Films

Journal Volume

427

Journal Issue

1-2

Pages

56-59

Date Issued

2003

Author(s)

Cheng, I.-C.

Wagner, S.

DOI

10.1016/S0040-6090(02)01243-9

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416546&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/303208

Type

journal article