Electron-electron interaction in high-quality epitaxial grapheme
Journal
New Journal of Physics
Journal Volume
13
Date Issued
2011
Author(s)
Abstract
Weak localization is studied in two high-quality epitaxial graphene samples grown on silicon-faced 6H-SiC substrates. Following the methodology of Kozikov et al (2010 Phys. Rev. B 82 075424), we measured the temperature dependence of carrier conductivity at zero and low magnetic (B) fields. In both samples, a logarithmic temperature dependence of the carrier conductivity was observed at B = 0 and its amplitude was larger than predicted by a single-particle model, suggesting that electron–electron interaction plays an important role in electron transport in epitaxial graphene films.
Type
journal article