High-performance gate-tunable spin valves based on transition metal dichalcogenides in the presence of phonon scattering
Journal
Journal of Alloys and Compounds
Journal Volume
1050
Start Page
185682
ISSN
09258388
Date Issued
2026-01-15
Author(s)
Abstract
The growing demand for high-speed and low-power electronic devices, particularly in artificial intelligence and Internet of Things applications, calls for next-generation memory technologies that overcome the limitations of conventional memory. Two-dimensional materials have emerged as promising candidates for future memory and three-dimensional integrated circuit systems due to their superior electronic properties and scalability. In this work, we propose a gate-tunable spin valve based on transition metal dichalcogenides (TMDs) that achieves both high read and write performance at room temperature under phonon scattering conditions. A tunneling magnetoresistance exceeding 3000 % is realized in the gated reading mode, while an ungated configuration yields a spin current density of 30 MA/cm², enabling fast and energy-efficient write operations. Moreover, the gate-tunable architecture effectively suppresses undesired overlap between reading and writing, ensuring stable memory operation. These results highlight the potential of TMD-based spintronic devices for high-performance memory applications.
Subjects
2D materials
Magnetoresistance
Phonon scattering
Spin valve
Spin-transfer torque
Transition metal dichalcogenides
Publisher
Elsevier Ltd
Type
journal article