Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas
Journal
Semiconductor Science and Technology
Journal Volume
15
Journal Issue
9
Pages
892-894
Date Issued
2000
Author(s)
Abstract
We report a novel method to synthesize GaNxAs1-x epitaxial films. The (001) GaAs substrates were irradiated by a pulsed laser in a nitrogen atmosphere at room temperature. High-resolution x-ray diffraction indicates the formation of an epitaxial GaNxAs1-x layer on the substrate. The effects of the ambient pressure and the laser parameters (fluence, repetition rate and number of shots) on the incorporated N content x and film quality are studied. A threshold laser fluence must be achieved in order that N can be incorporated. The maximum extent of x obtained is about 1%.
Type
journal article