Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas

Journal

Semiconductor Science and Technology

Journal Volume

15

Journal Issue

9

Pages

892-894

Date Issued

2000

Author(s)

DOI

10.1088/0268-1242/15/9/303

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0034274012&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/288637

Type

journal article