Annealing Effect on the Formation of In(Ga)As Quantum Rings From InAs Quantum Dots
Journal
IEEE Photonics Technology Letters
Journal Volume
20
Journal Issue
2
Pages
165-167
Date Issued
2008
Author(s)
Abstract
The correlation between the In(Ga)As quantum rings (QRs) and their precursors InAs quantum dots (QDs) are studied by changing the annealing time after the deposition of a thin InAs layer on GaAs. The atomic force microscopy and photolumines-cence (PL) are used to characterize the morphologies and elec-tronic states of QDs and QRs. The longer annealing time tends to enlarge the QD size to high aspect ratio, group InAs islands into several different sizes, and red-shift the PL peak. The resul-tant QRs show the ridge-confined rings and the PL peaks of QRs blue-shift with increasing QD aspect ratio. It demonstrates an im-portant way to tailor the electronics states of QRs. © 2008 IEEE
Subjects
Adatom migration; annealing time; elastic relax-ation; quantum dots (QDs); quantum rings (QRs)
Type
journal article