前瞻性量子元件 子計畫一：砷銻化鎵/砷化鎵第二型量子井雷射（I）
Date Issued
2005-10-31
Date
2005-10-31
Author(s)
DOI
932215E002023
Abstract
In this study, we fabricated GaAsSb/GaAs
type-II quantum well (QW) lasers and
analyzed the basic band structure of the
GaAsSb/GaAs QW. Because of a peculiar
band-bending effect in the QW, the emission
wavelength of the laser has a blue-shift as the
cavity length is shortened. We utilized this
effect to investigate the band line-up of the
GaAsSb/GaAs QW. Through a simulation for
the self-consistent solutions for the Poisson
and Schrödinger equations, the optical gain
of GaAsSb/GaAs QW was calculated. By
comparing the simulated blue-shift on the
gain peak with the experimental results, we
can obtain the band structure of GaAsSb/
GaAs QW. The best results after fitting: the
valence band offset ratio (Qv) of the
unstrained GaAs0.64Sb0.36/GaAs is 1.02, and
the unstrained band-gap bowing parameter of
GaAsSb is -1.31 eV. These results can be
used in the design of GaAsSb optoelectronic
devices and further studies on the thermal
properties of GaAsSb lasers.
Subjects
molecular beam epitaxy
Sb-based compound semiconductor
GaAsSb
quantum well
quantum well
band lineup
bowing
parameter
parameter
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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