A Study of Silicon Nitride Nanotube Synthesis at Relative Low Temperature by Thermal-Heating Chemical-Vapor Deposition Method
Resource
MATERIALS CHEMISTRY & PHYSICS v.93 n.1 pp.10-15
Journal
MATERIALS CHEMISTRY & PHYSICS
Journal Volume
v.93
Journal Issue
n.1
Pages
10-15
Date Issued
2005
Date
2005
Author(s)
Abstract
Thermal-heating chemical-vapor deposition has been used to synthesize Si3 N4 nanotubes by heating tetra-ethyl-ortho- silicate at 165°C to get vapor to flow in and providing nitrogen gas to the reaction chamber as the source of Si and N, respectively. A stainless-steel wire was coiled as entangled wire scaffold with a pore size of 1mm. The wire scaffold was placed in the middle part of the reaction chamber. Cr, Fe and Mo, contained in the stainless-steel, served as catalysts to provide in situ growth of Si3N4 nanotubes on the coil surface at a relative low reactant temperature (1000°C) through the vapor–liquid–solid growth mechanism. Most of the nanotubes are end-closed by a metallic particle. All the nanotubes were identified as α- Si3N4 in crystal structure.
Subjects
Si3N4 nanotube
Thermal-heating chemical-vapor deposition
Tetra-ethyl-ortho-silicate
Stainless-steel