Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
Journal
Journal of Applied Physics
Journal Volume
122
Journal Issue
22
Date Issued
2017
Author(s)
Abstract
We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B∥, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at B∥ into the one measured at I∥B∥ is suggested and is shown to yield results that agree with the experiment. ? 2017 Author(s).
Subjects
Anisotropy; Crystallography; Magnetoresistance; Crystallographic axes; In-plane fields; Parallel orientation; Perpendicular orientation; Ultra-high; Semiconductor quantum wells
Type
journal article