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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
High-Temperature Quasi-Saturation Model of High-Voltage DMOS Power Devices
Details
High-Temperature Quasi-Saturation Model of High-Voltage DMOS Power Devices
Journal
Hong Kong Electron Devices Meeting
Pages
83-86
Date Issued
2002-06
Author(s)
C. L. Yang
J. B. Kuo
JAMES-B KUO
DOI
10.1109/HKEDM.2002.1029162
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/299090
Type
conference paper