Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current
Journal
Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur
Journal Volume
72
Journal Issue
2
Pages
477-481
Date Issued
2016
Author(s)
Abstract
In this work, two states phenomenon in the current-voltage behavior of metal-insulator-semiconductor (MIS) tunnel diode with ultra-thin SiO 2 were investigated after negative/positive bias stress. The set state current is lower since the Schottky barrier height increases as electrons trap in the oxide at device edge. However, the positive read voltage leads to electron de-trapping, i.e., charge loss, and therefore the retention of MIS tunnel diode is inferior. In order to enhance the retention, the MIS TD coupled by the remote gate, i.e., gated-MIS TD, was proposed. Two gated-MIS TD’s with dielectric structures, SiO 2 and Al 2 O 3 /HfO 2 /SiO 2 (AHO) were investigated. By using the gate coupling structure, positive read voltage would not de-trap the trapped electrons directly, which reduced the disturbance due to reading.
Type
journal article