Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

Journal

Solid-State Electronics

Journal Volume

50

Journal Issue

2

Pages

109-113

Date Issued

2006

Author(s)

Wei, J.-Y.

Maikap, S.

Lee, M.H.

Lee, C.C.

DOI

10.1016/j.sse.2005.10.032

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-32344445676&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/324163

Type

journal article