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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate
Details
High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate
Journal
Journal of Crystal Growth
Journal Volume
310
Journal Issue
11
Pages
2712-2716
Date Issued
2008
Author(s)
CHIH-CHUNG YANG
Huang, J.-J.
Tang, T.-Y.
Huang, C.-F.
CHIH-CHUNG YANG
DOI
10.1016/j.jcrysgro.2008.02.007
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-42749086595&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/338998
Type
journal article