Room-Temperature Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas
Journal
Japanese Journal of Applied Physics
Journal Volume
33
Journal Issue
5R
Pages
2448-
Date Issued
1994
Author(s)
Abstract
Using contactless photoreflectance at 300 K we have characterized two InAlAs/InGaAs heterojunction bipolar transistor structures grown by molecular beam epitaxy. The spectra from the InAlAs and InGaAs interface can be accounted for on the basis of a triangular potential well which confined two-dimensional electron gas. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration. Furthermore, other important parameters of the system, such as built-in electric fields and In composition, can be evaluated. © The Japan Society of Applied Physics.
SDGs
Other Subjects
Composition effects; Electric field effects; Electron transitions; Excitons; Heterojunctions; Interfaces (materials); Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor device structures; Semiconductor growth; Indium aluminum arsenide; Indium gallium arsenide; Photoreflectance; Two dimensional electron gas; Bipolar transistors
Type
journal article