Optimum Ge profile design for base transit time minimization of SiGe HBT
Resource
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Journal
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Pages
-
Date Issued
2001-12
Date
2001-12
Author(s)
Chang, S.T.
Liu, C.W.
Lin, C.H.
DOI
N/A
Abstract
An analytical equation of the base transit time including the effects of minority carrier recombination lifetime and velocity saturation for Si/SiGe HBTs with different Ge profiles has been derived. The reduction of recombination lifetime in the neutral base region due to the heavy base doping can shorten the base transit time, while the finite saturation velocity degrades the base transit time, as compared to infinite saturation velocity. The optimum design of Ge profiles in the base to minimize the base transit time can be obtained by the analytical model.
Type
journal article
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