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College of Science / 理學院
Applied Physics / 應用物理研究所
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
Details
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
Journal
Fundamentals of III-V Semiconductor MOSFETs
Pages
251-284
Date Issued
2010
Author(s)
MINGHWEI HONG
Kwo, J
Lin, TD
Huang, ML
Lee, WC
Chang, P
DOI
10.1007/978-1-4419-1547-4_9
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/357461
Type
book chapter
