Study on InAsPSb/InAsSb multiple quantum well light emitting diode
Date Issued
2007
Date
2007
Author(s)
Wu, Chia-En
DOI
zh-TW
Abstract
In this study, InAsPSb/InAsSb multiple quantum well light emitting diodes grown by gas source molecular beam epitaxy were fabricated and their EL properties were investigated. Before processing device sample, InAsPSb etching solution and etching rate were tested. We found that the etching rate was different on n-type and p-type InAsPSb. Using HCl:H2O2(30%):H2O(1:1:8) as etching solution, the rate on n-type InAsPSb is 11 times faster than the rate on p-type InAsPSb while only 2 times difference using H3PO4:H2O2(30%):H2O(1:1:8) on n-type and p-type InAsPSb. The annealing temperature should be below 400oC or diode would be broken. From temperature dependent EL measurement we found the intensity of LEDs drastically decayed above 50K, and 500 times weaker at 300K. The LI analysis shows that spontaneous emission dominates at low temperature while at high temperature Auger recombination dominates and represents the high temperature sensitivity of emission intensity. We have successfully fabricated LEDs whose emitting power is 10μW in pulse mode with 20% duty cycle at room temperature when injection current density is 10A/cm2.
Subjects
中紅外線
發光二極體
銻磷砷化銦
多重量子井
MIR
InAsPSb
MQW
LED
light emitting diode
mid-infrared
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-96-R94943125-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):7888f4d827f491bd776d68f4e99362f0