Effective mass and Landé g-factor in Si-MOSFETs near the critical density

Journal

Journal of the Korean Physical Society

Journal Volume

64

Journal Issue

3

Pages

424-428

Date Issued

2014

Author(s)

DOI

10.3938/jkps.64.424

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84894879515&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/386104

SDGs

[SDGs]SDG7

Type

journal article