Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode
Journal
Journal of Applied Physics
Journal Volume
112
Journal Issue
3
Date Issued
2012
Author(s)
Wang, Chang-Pei
Abstract
This paper analyzes the optical polarization characteristics and internal quantum efficiency (IQE) of an AlGaN based polar, nonpolar, and semipolar deep ultra-violet (UV) light emitting diode (LED). A one dimensional model is used to solve drift-diffusion, Poisson equations, and 6 × 6 k·p Schrodinger equations to investigate band structure and emission characteristics. The light emission polarization ratios of c-plane, nonpolar, and semipolar AlGaN based deep UV LEDs with different Al compositions and injection current were studied. The study shows that the optical polarization of the c-plane AlGaN based deep UV LED is dominated by the out-plane polarization as the Al composition increases. For nonpolar and semipolar structures, the light polarization direction is mainly dominated by the in-plane polarized light which is good for the surface emitting. Finally, influences of the IQE by changing the p-type activation energy, growth orientation, and nonradiatve lifetime are studied in this paper.
SDGs
Type
journal article