The Etching Characteristics of (100) GaAs by K2S2O8-H2O System
Journal
Journal of the Electrochemical Society
Journal Volume
132
Journal Issue
12
Pages
3016-3019
Date Issued
1985
Author(s)
Abstract
A new etching solution, aqueous potassium peroxodisulfate, was developed for etching . The peroxodisulfate ion is a powerful oxidizing reagent which can extract two electrons and oxidize the surface. Because this solution is acidic with pH value of 2, it can dissolve the oxidized product. The most significant feature of the solution is that its etching rate is extremely slow, i.e., 150 Å/min, and can be further reduced by adding to the solution. It is found that adding does not enhance the etching rate but does significantly improve the morphology of the etched surface.
SDGs
Type
journal article