SiGe Superlattice Infrared Photodetector with Schottky Barrier for Background Limited Performance at High Temperature
Date Issued
2004
Date
2004
Author(s)
Jhang, Fu-Tsung
DOI
en-US
Abstract
With the development of novel semiconductor industry, the sizes of IC devices have been scaled down and the signal is very small during the transmission between these devices. For this reason, background limit performance (BLIP) of a photodetector is more important than the value of responsivity. Schottky contact functions as a large resistance with series connection to the structure of a SLIP, and response (means current in this thesis) of the SLIP is very small due to the low bias voltage applied to the active region. In this thesis, we use metal-semiconductor Schottky barrier to reduce the dark current and to provide a large resistance.
Subjects
暗電流
蕭基接面
超晶格
背景限制溫度
Dark current
superlattice
Schottky contact
Background Limited Performance
Type
thesis
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