Adsorption Mechanism of Gallium(III) and Indium(III) onto γ-Al2O3
Journal
Journal of Colloid and Interface Science
Journal Volume
188
Journal Issue
1
Pages
201-208
Date Issued
1997
Author(s)
Abstract
The adsorption mechanism of trivalent Ga and In onto γ-Al2O3 was investigated using a triple-layer model simulation and pressure-jump technique. Bidentate Ga3+ and In3+ and monodentate GaOH2+/InOH2+ are the most likely surface species responsible for Ga(lII)In(III) adsorption. Sorption of Ga(III) and In(III) can be interpreted as an associative process. The adsorption pathway is a two-step mechanism: proton release from surface hydroxyl group(s) followed by coordination of Ga(III)In(III) species to the depronated site(s). Intrinsic adsorption rate constants cannot be estimated with a liner free-energy relationship between the adsorption rate constant and the rate of water exchange, which is developed solely based on the dissociative sorption mechanism of divalent ions.
SDGs
Type
journal article
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