Low Noise and High Gain 94 GHz Monolithic InP-Based HEMT Amplifiers
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Pages
239-242
Date Issued
1993
Author(s)
Abstract
This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 μm pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27 ± 2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge] these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results. © 1993 IEEE
Other Subjects
Electric power utilization; III-V semiconductors; Indium phosphide; Semiconducting indium phosphide; Field effect transistors; Gain measurement; Gates (transistor); Indium compounds; DC power consumption; High gain; InAlAs/InGaAs/InP; Low-high; Lower noise; Monolithic amplifiers; Monolithics; Noise gain; Small signal gain; W bands; Noise figure; Amplifiers (electronic); Monolithic amplifiers; Noise figure; Pseudomorphic technology
Type
conference paper